1/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a 4v drive nch mosfet RSH125N03 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (sop8) . ? application power switching, dc / dc converter. ? packaging specifications ? inner circuit package code taping basic ordering unit (pieces) RSH125N03 tb 2500 type ? absolute maximum ratings (ta=25 ? c) parameter v v dss symbol 30 v v gss 20 a i d a i dp a i s a i sp w p d c tch 150 c tstg ? 55 to 150 limits unit d rain-source voltage g ate-source voltage d rain current t otal power dissipation c hannel temperature s torage temperature continuous pulsed continuous s ource current ( body diode) pulsed 12.5 50 1.6 6.4 2 ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board. ? 1 ? 1 ? 2 ? thermal resistance c / w rth (ch-a) 62.5 parameter symbol limits unit channel to ambient ? mounted on a ceramic board. ? each lead has same dimensions sop8 ? 1 esd protection diode ? 2 body diode ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1) (8) (2) (7) (3) (6) (4) (5) ? 2 ? 1 (8) (7) (6) (5) (1) (2) (3) (4) (1) source (2) source (3) source (4) gate (5) drain (6 )drain (7) drain (8) drain
2/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet RSH125N03 ? electrical characteristics (ta=25 ? c) parameter symbol i gss y fs min. typ. max. unit conditions gate-source leakage v (br) dss drain-source breakdown voltage i dss zero gate voltage drain current v gs (th) gate threshold voltage static drain-source on-state resistance r ds (on) forward transfer admittance input capacitance output capacitance c iss reverse transfer capacitance c oss turn-on delay time c rss rise time t d (on) turn-off delay time t r fall time t d (off) total gate charge t f gate-source charge q g gate-drain charge q gs q gd ?? 10 av gs = 20v, v ds = 0v v dd 15v 30 ?? vi d = 1ma, v gs = 0v ?? 1 av ds = 30v, v gs = 0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 6.5 9.1 i d = 12.5a, v gs = 10v ? 8.6 12.1 m i d = 12.5a, v gs = 4.5v ? 9.3 13.1 i d = 12.5a, v gs = 4v 10 ?? si d = 12.5a, v ds = 10v ? 1670 ? pf v ds = 10v ? 470 270 ? pf v gs = 0v ? 10 ? pf f = 1mhz v gs = 10v r l = 2.40 r g = 10 ? 17 ? ns ? 69 ? ns ? 30 ? ns ? 20 ? ns ? 4.2 28 nc ? 8.0 ? nc v gs = 5v ?? nc i d = 12.5a i d = 6.25a, v dd 15v ? pulsed ? ? ? ? ? ? ? ? ? ? body diode characteristics (source-drain) (ta=25 ? c) forward voltage v sd ?? 1.2 v i s = 6.4a, v gs = 0v parameter symbol min. typ. max. unit conditions ? pulsed ?
3/3 www.rohm.com c 2009 rohm co., ltd. all rights reserved. 2009.12 - rev.a data sheet RSH125N03 ? electrical characteristic curves 0.01 0.1 1 10 10 0 drain-source voltage : v ds (v) 100 1000 capacitance : c (pf) 10000 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.1 1 10 10 0 drain current : i d (a) 1 10 100 switching time : t (ns) 1000 fig.2 switching characteristics ta = 25 c v dd = 15v v gs = 10v r g = 10 pulsed t r t f t d (off) t d (on) 0 5 10 15 20 25 30 3 5 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 9 10 gate-source voltage : v gs (v) fig.3 dynamic input characteristic s ta = 25 c v dd = 15v i d = 12.5a r g = 10 pulsed 0.0 0.5 1.0 1.5 2.0 2.5 3 .0 gate-source voltage : v gs (v) 100 0.001 0.01 0.1 1 10 drain current : i d (a) fig.4 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed 024681012141 6 gate-source voltage : v gs (v) 0 50 static drain-source on-state resistance : r ds (on) ( m ) fig.5 static drain-source on-state resistance vs. gate-source voltage i d = 12.5a i d = 6.25a ta = 25 c pulsed 0.0 0.5 1.0 1 .5 source-drain voltage : v sd (v) 0.01 0.1 1 10 100 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 10 0 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) ( m ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) 0.01 0.1 1 10 10 0 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed drain current : i d (a) static drain-source on-state resistance : r ds (on) ( m ) fig.9 static drain-source on-state resistance vs. drain current ( ?? ) 0.01 0.1 1 10 10 0 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4v pulsed
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